SiC Annealing
SiC annealing is used to produce a silicide (alloy) layer on backside electrode.
Reference: In Si-IGBT, this technology is widely used for activating impurities injected on the backside.
SiC annealing is used to produce a silicide (alloy) layer on backside electrode.
Reference: In Si-IGBT, this technology is widely used for activating impurities injected on the backside.
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